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STP110N8F6 Datasheet(PDF) 5 Page - STMicroelectronics

Part No. STP110N8F6
Description  Very low on-resistance
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP110N8F6 Datasheet(HTML) 5 Page - STMicroelectronics

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DocID026831 Rev 2
5/13
STP110N8F6
Electrical characteristics
13
Table 7. Source-drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
VSD
(1)
1.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 110 A, VGS = 0
-
1.2
V
trr
Reverse recovery time
ISD = 110 A, di/dt = 100 A/µs
VDD = 64 V (see Figure 15)
-30
ns
Qrr
Reverse recovery charge
-
34
nC
IRRM
Reverse recovery current
-
2.3
A


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