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STP110N8F6 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STP110N8F6
Description  Very low on-resistance
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP110N8F6 Datasheet(HTML) 3 Page - STMicroelectronics

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DocID026831 Rev 2
3/13
STP110N8F6
Electrical ratings
13
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
80
V
VGS
Gate-source voltage
±20
V
ID
Drain current (continuous) at TC = 25 °C
110
A
ID
Drain current (continuous) at TC = 100 °C
85
A
IDM
(1)
1.
Pulse width is limited by safe operating area
Drain current (pulsed)
440
A
PTOT
Total dissipation at TC = 25 °C
200
W
EAS
(2)
2.
Starting TJ = 25 °C, ID = 55 A, VDD = 60 V
Single pulse avalanche energy
180
mJ
TJ
Operating junction temperature
-55 to 175
°C
Tstg
Storage temperature
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case max.
0.75
°C/W
Rthj-amb
Thermal resistance junction-ambient max.
62.5
°C/W


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