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STP110N8F6 Datasheet(PDF) 1 Page - STMicroelectronics

Part No. STP110N8F6
Description  Very low on-resistance
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP110N8F6 Datasheet(HTML) 1 Page - STMicroelectronics

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This is information on a product in full production.
December 2014
DocID026831 Rev 2
1/13
STP110N8F6
N-channel 80 V, 0.0056
Ω typ.,110 A, STripFET™ F6
Power MOSFET in a TO-220 package
Datasheet
- production data
Figure 1. Internal schematic diagram
Features
• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using the STripFET™ F6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low RDS(on) in all
packages.
TO-220
1
2
3
TAB
Order code
VDS
RDS(on)max
ID
PTOT
STP110N8F6
80 V
0.0065
110 A
200 W
Table 1. Device summary
Order code
Marking
Package
Packing
STP110N8F6
110N8F6
TO-220
Tube
www.st.com


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