STW7N105K5 datasheet(4/18 Pages) STMICROELECTRONICS

Part #	STW7N105K5

Description	N-channel 1050 V, 1.4 廓 typ., 4 A MDmesh??K5 Power MOSFETs in TO-220, IPAK and TO-247 packages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

STP7N105K5, STU7N105K5, STW7N105K5

4/18

DocID026183 Rev 2

2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified).

Table 4: On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS= 0, ID = 1 mA

1050

V

IDSS

Zero gate voltage drain

current

VGS = 0, VDS = 1050 V

1

µA

VGS = 0, VDS = 1050 V,

Tc=125 °C(1)

50

µA

IGSS

Gate body leakage current

VDS = 0, VGS = ± 20 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 100 µA

3

4

5

V

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID= 2 A

1.4

2

Ω

Notes:

(1)Defined by design, not subject to production test.

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS =100 V, f=1 MHz, VGS=0

-

380

-

pF

Coss

Output capacitance

-

40

-

pF

Crss

Reverse transfer

capacitance

-

0.65

-

pF

Co(tr)(1)

Equivalent capacitance

time related

VGS = 0, VDS = 0 to 840 V

-

47

-

pF

Co(er)(2)

Equivalent capacitance

energy related

-

17

-

pF

RG

Intrinsic gate resistance

f = 1MHz open drain

-

7

-

Ω

Qg

Total gate charge

VDD = 840 V, ID = 4 A

VGS =10 V

Figure 18: "Test circuit for gate

charge behavior"

-

11

-

nC

Qgs

Gate-source charge

-

2.8

-

nC

Qgd

Gate-drain charge

-

5.6

-

nC

Notes:

(1)Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

(2)Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS

increases from 0 to 80% VDSS

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