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STL75N8LF6 Datasheet(PDF) 3 Page - STMicroelectronics |
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STL75N8LF6 Datasheet(HTML) 3 Page - STMicroelectronics |
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STL75N8LF6 Electrical ratings Doc ID 018820 Rev 3 3/16 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 80 V VGS Gate-source voltage +20 / -16 V ID (1) 1. The value is rated according to Rthj-case Drain current (continuous) at TC = 25 °C 75 A ID (1) Drain current (continuous) at TC = 100 °C 50 A ID (2) 2. The value is rated according to Rthj-pcb Drain current (continuous) at Tpcb = 25 °C 18 A ID (3) Drain current (continuous) at Tpcb=100 °C 11 A IDM (3) 3. Pulse width limited by safe operating area Drain current (pulsed) 72 A PTOT (1) Total dissipation at TC = 25 °C 80 W PTOT (3) Total dissipation at Tpcb = 25 °C 4 W Derating factor 0.03 W/°C TJ Tstg Operating junction temperature Storage temperature -55 to 175 °C Table 3. Thermal resistance Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case (drain, steady state) 1.56 °C/W Rthj-pcb (1) 1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec Thermal resistance junction-ambient 31.3 °C/W Table 4. Avalanche data Symbol Parameter Value Unit IAV Not-repetitive avalanche current, (pulse width limited by Tj Max) 18 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAV , VDD = 50 V) 670 mJ |
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