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STL75N8LF6 Datasheet(PDF) 1 Page - STMicroelectronics |
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STL75N8LF6 Datasheet(HTML) 1 Page - STMicroelectronics |
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November 2011 Doc ID 018820 Rev 3 1/16 16 STL75N8LF6 N-channel 80 V, 5.6 m Ω, 18 A, PowerFLAT™ 5x6 STripFET™ VI DeepGATE™ Power MOSFET Features ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses Applications ■ Switching applications Description This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Figure 1. Internal schematic diagram Order code VDSS RDS(on) max ID STL75N8LF6 80 V < 7.4 m Ω 18 A (1) 1. The value is rated according Rthj-pcb PowerFLAT™ 5x6 1 2 3 4 Table 1. Device summary Order code Marking Package Packaging STL75N8LF6 75N8LF6 PowerFLAT™ 5x6 Tape and reel www.st.com |
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