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STL34N65M5 Datasheet(PDF) 5 Page - STMicroelectronics |
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STL34N65M5 Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 15 page DocID023325 Rev 1 5/15 STL34N65M5 Electrical characteristics 15 Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(v) Voltage delay time VDD = 400 V, ID = 18 A, RG = 4.7 Ω, VGS = 10 V (see Figure 19) -59 - ns tr(v) Voltage rise time - 8.7 - ns tf(i) Current fall time - 7.5 - ns tc(off) Crossing time - 12 - ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD (1) 1. The value is rated according to Rthj-case and limited by package. Source-drain current - 22.5 A ISDM (1),(2) 2. Pulse width limited by safe operating area. Source-drain current (pulsed) - 90 A VSD (3) 3. Pulsed: pulse duration = 300 µs, duty cycle 1.5%. Forward on voltage ISD = 22.5 A, VGS = 0 - 1.5 V trr Reverse recovery time ISD = 22.5 A, di/dt = 100 A/µs VDD = 100 V (see Figure 16) - 330 ns Qrr Reverse recovery charge - 5.3 µC IRRM Reverse recovery current - 32.5 A trr Reverse recovery time ISD = 22.5 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 16) - 412 ns Qrr Reverse recovery charge - 7.3 µC IRRM Reverse recovery current - 35.5 A |
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