STL30N10F7 datasheet(4/15 Pages) STMICROELECTRONICS

Part #	STL30N10F7

Description	Ultra low on-resistance

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

STL30N10F7

4/15

DocID025424 Rev 1

2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4. On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

VGS = 0, ID = 250 µA

100

V

IDSS

Zero gate voltage

drain current

VGS = 0, VDS = 100 V

10

µA

VGS = 0,

VDS = 100 V, TC = 125 °C

100

µA

IGSS

Gate-body leakage

current

VDS = 0, VGS = + 20 V

100

nA

VGS(th)

Gate threshold voltage VDS = VGS, ID = 250 µA

2.5

4.5

V

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 4 A

0.027

0.035

Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 50 V, f = 1 MHz,

VGS = 0

-

920

-

pF

Coss

Output capacitance

-

215

-

pF

Crss

Reverse transfer

capacitance

-19

-

pF

Qg

Total gate charge

VDD = 50 V, ID = 8 A,

VGS = 10 V

(see Figure 14)

-14

-

nC

Qgs

Gate-source charge

-

7

-

nC

Qgd

Gate-drain charge

-

3

-

nC

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 50 V, ID = 4 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 13)

-9.8

-

ns

tr

Rise time

-

14

-

ns

td(off)

Turn-off delay time

-

14.8

-

ns

tf

Fall time

-

4.6

-

ns

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