STL18N65M5 datasheet(4/17 Pages) STMICROELECTRONICS

Part #	STL18N65M5

Description	Very low intrinsic capacitance

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

STL18N65M5

4/17

DocID023634 Rev 2

2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4. On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

(VGS = 0)

ID = 1 mA

650

V

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 650 V

VDS = 650 V, TC=125 °C

1

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 25 V

± 100

nA

VGS(th)

Gate threshold voltage VDS = VGS, ID = 250 µA

3

4

5

V

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 7.5 A

0.215

0.240

Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0

-

1240

-

pF

Coss

Output capacitance

-

32

-

pF

Crss

Reverse transfer

capacitance

-3

-

pF

Co(tr)

(1)

1.

Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss

when VDS increases from 0 to 80% VDSS

Equivalent

capacitance time

-99

-

pF

Co(er)

(2)

2.

Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as

Coss when VDS increases from 0 to 80% VDSS

Equivalent

capacitance energy

-

pF

RG

Intrinsic gate

resistance

f = 1 MHz open drain

-

3

-

Ω

Qg

Total gate charge

VDD = 520 V, ID = 7.5 A,

VGS = 10 V

(see Figure 16)

-31

-

nC

Qgs

Gate-source charge

-

8

-

nC

Qgd

Gate-drain charge

-

14

-

nC

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