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STL10N60M2 Datasheet(PDF) 1 Page - STMicroelectronics |
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STL10N60M2 Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 16 page This is information on a product in full production. March 2014 DocID025439 Rev 2 1/16 STL10N60M2 N-channel 600 V, 0.580 Ω typ., 5.5 A MDmesh II Plus™ low Qg Power MOSFET in a PowerFLAT™ 5x6 HV package Datasheet - production data Figure 1. Internal schematic diagram Features • Extremely low gate charge • Lower RDS(on) x area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected Applications • Switching applications Description This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. AM15540v3 5 6 7 8 12 3 4 Top View D(5, 6, 7, 8) G(4) S(1, 2, 3) 1 2 3 4 PowerFLAT™ 5x6 HV Order code VDS @ TJmax RDS(on) max ID STL10N60M2 650 V 0.660 Ω 5.5 A Table 1. Device summary Order code Marking Package Packaging STL10N60M2 10N60M2 PowerFLAT™ 5x6 HV Tape and reel www.st.com |
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