STL10N60M2 datasheet(1/16 Pages) STMICROELECTRONICS

Part #	STL10N60M2

Description	N-channel 600 V, 0.580 廓 typ., 5.5 A MDmesh II Plus??low Qg Power MOSFET in a PowerFLAT??5x6 HV package

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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This is information on a product in full production.

March 2014

DocID025439 Rev 2

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STL10N60M2

N-channel 600 V, 0.580

Ω typ., 5.5 A MDmesh II Plus™ low Qg

Power MOSFET in a PowerFLAT™ 5x6 HV package

Datasheet

- production data

Figure 1. Internal schematic diagram

Features

• Extremely low gate charge

• Lower RDS(on) x area vs previous generation

• Low gate input resistance

• 100% avalanche tested

• Zener-protected

Applications

• Switching applications

Description

This device is an N-channel Power MOSFET

developed using a new generation of MDmesh™

technology: MDmesh II Plus™ low Qg. This

revolutionary Power MOSFET associates a

vertical structure to the company's strip layout to

yield one of the world's lowest on-resistance and

gate charge. It is therefore suitable for the most

demanding high efficiency converters.

AM15540v3

5

6

7

8

12

3

4

Top View

D(5, 6, 7, 8)

G(4)

S(1, 2, 3)

1

2

3

4

PowerFLAT™ 5x6 HV

Order code

VDS @

TJmax

RDS(on) max

ID

STL10N60M2

650 V

0.660

Ω

5.5 A

Table 1. Device summary

Order code

Marking

Package

Packaging

STL10N60M2

10N60M2

PowerFLAT™ 5x6 HV

Tape and reel

www.st.com

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