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L6491D Datasheet(PDF) 1 Page - STMicroelectronics |
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L6491D Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 24 page  This is information on a product in full production. March 2015 DocID024832 Rev 1 1/24 L6491 High voltage high and low-side 4 A gate driver Datasheet - production data Features High voltage rail up to 600 V dV/dt immunity ± 50 V/ns in full temperature range Driver current capability: 4 A source/sink Switching times 15 ns rise/fall with 1 nF load 3.3 V, 5 V TTL/CMOS inputs with hysteresis Integrated bootstrap diode Comparator for fault protections Smart shutdown function Adjustable deadtime Interlocking function Compact and simplified layout Bill of material reduction Effective fault protection Flexible, easy and fast design Applications Motor driver for home appliances, factory automation, industrial drives and fans HID ballasts Power supply unit Induction heating Wireless chargers Industrial inverters UPS Description The L6491 is a high voltage device manufactured with the BCD6 “OFF-LINE” technology. It is a single-chip half-bridge gate driver for N-channel power MOSFET or IGBT. The high-side (floating) section is designed to stand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy interfacing microcontroller/DSP. An integrated comparator is available for fast protection against overcurrent, overtemperature, etc. SO-14 Table 1. Device summary Order code Package Packaging L6491D SO-14 Tube L6491DTR SO-14 Tape and reel www.st.com |
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