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TA0102A Datasheet(PDF) 3 Page - Tripath Technology Inc. |
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TA0102A Datasheet(HTML) 3 Page - Tripath Technology Inc. |
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3 / 12 page  Tripath Technology, Inc. - Technical Information 3 TA0102A, Rev. 3.1/06.01 Performance Characteristics – Single Ended, Vs = +45V Unless otherwise specified, f = 1kHz, Measurement Bandwidth = 22kHz. TA = 25°C. See Notes 1 & 2 for Operating Conditions and Test/Application Circuit Setup. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITS P OUT Output Pow er (Continuous Average/Channel) THD+N = 0.1% R L = 8Ω R L = 4Ω THD+N = 1% R L = 8Ω R L = 4Ω 80 130 100 170 W W W W THD + N Total Harmonic Distortion Plus Noise P O = 20W/Channel, RL = 8Ω 0.05 % IHF-IM IHF Intermodulation Distortion 19kHz, 20kHz, 1:1 (IHF), R L = 4Ω P OUT = 30W/Channel 0.05 % SNR Signal-to-Noise Ratio A-Weighted, P OUT = 88W/Ch, RL = 8Ω 98.5 dB CS Channel Separation 0dBr = 30W, R L= 8Ω 85 dB PSRR Pow er Supply Rejection Ratio f = 120Hz, Vripple = 100 mV 67 dB η Pow er Efficiency P OUT = 230W/Channel, RL = 4Ω 82 % e NOUT Output Noise Voltage A-Weighted, no signal, input shorted, DC offset nulled to zero 300 µV Performance Characteristics – Single Ended, Vs = +33.75V Unless otherwise specified, f = 1kHz, Measurement Bandwidth = 22kHz. TA = 25°C. See Notes 1 & 2 for Operating Conditions and Test/Application Circuit Setup. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITS P OUT Output Pow er (Continuous Average/Channel) THD+N = 0.1% R L = 8Ω R L = 4Ω THD+N = 1% R L = 8Ω R L = 4Ω 47 77 65 110 W W W W THD + N Total Harmonic Distortion Plus Noise P O = 20W/Channel, RL = 8Ω 0.05 % IHF-IM IHF Intermodulation Distortion 19kHz, 20kHz, 1:1 (IHF), R L = 4Ω P OUT = 30W/Channel 0.03 % SNR Signal-to-Noise Ratio A-Weighted, P OUT = 47W/Ch, RL = 8Ω 100 dB CS Channel Separation 0dBr = 20W, R L= 8Ω 85 dB PSRR Pow er Supply Rejection Ratio f = 120Hz, Vripple = 100 mV 67 dB η Pow er Efficiency P OUT = 85W/Channel, RL = 8Ω 90 % e NOUT Output Noise Voltage A-Weighted, no signal, input shorted, DC offset nulled to zero 195 µV Minimum and maximum limits are guar anteed but may not be 100% tested. Notes: 1. V5 = +5V, VN12 = +12V referenced to VSNEG 2. Test/Application Circuit Values: D = MUR120T3 diodes, RIN = 22.1KΩ RD = 33ΩRS = 0.025ΩRG = 30Ω ROCR1 = ROCR2 = 0Ω, LF = 18uH (Amidon core T200-2) CF = 0.22uF, CD = 0.1uF, CIN = 1uF, CBY = 0.1uF Power Output MOSFET, M = ST STP19NB20 BBM0 =BBM1 = 1 |
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