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SUB85N04-04 Datasheet(PDF) 4 Page - Vishay Siliconix |
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SUB85N04-04 Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 5 page SUP/SUB85N04-04 Vishay Siliconix www.vishay.com 4 Document Number: 71125 S-41261—Rev. C, 05-Jul-04 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Drain Source Breakdown vs. Junction Temperature Avalanche Current vs. Time 0.0 0.4 0.8 1.2 1.6 2.0 −50 −25 0 25 50 75 100 125 150 175 On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage TJ − Junction Temperature (_C) VSD − Source-to-Drain Voltage (V) 100 10 1 0.3 0.6 0.9 1.2 VGS = 10 V ID = 30 A TJ = 25_C TJ = 150_C 0 35 39 43 47 51 55 −50 −25 0 25 50 75 100 125 150 175 TJ − Junction Temperature (_C) tin (Sec) 1000 10 0.00001 0.001 0.1 1 0.1 0.01 IAV (A) @ TA = 150_C ID = 250 mA 100 1 0.0001 IAV (A) @ TA = 25_C |
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