STPS2H100 datasheet(3/4 Pages) STMICROELECTRONICS

Part #	STPS2H100

Description	HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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STPS2H100

3/4

I (µA)

R

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

0

2040

6080

100

V (V)

R

T =125°C

j

T =150°C

j

T =100°C

j

T =50°C

j

T =25°C

j

T =75°C

j

Fig. 7: Reverse leakage current versus reverse

voltage applied (typical values).

I

(A)

FM

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

V

(V)

FM

T =25°C

(maximum values)

j

T =125°C

(maximum values)

j

T =125°C

(typical values)

j

Fig. 9-1: Forward voltage drop versus forward

current (low level).

C(pF)

10

100

1

10

100

V (V)

R

F=1MHz

V

=30mV

T =25°C

OSC

j

Fig. 8:

Junction capacitance versus reverse

voltage applied (typical values).

I

(A)

FM

1

10

100

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

V

(V)

FM

T =125°C

(typical values)

j

T =125°C

(maximum values)

j

T =25°C

(maximum values)

j

Fig. 9-2: Forward voltage drop versus forward

current (high level).

I (A)

M

0

1

2

3

4

5

6

7

8

9

10

1.E-03

1.E-02

1.E-01

1.E+00

IM

t

δ=0.5

t(s)

T =25°C

a

T =75°C

a

T =125°C

a

Fig. 5: Non repetitive surge peak forward current

versus overload duration (maximum values).

Z/R

th(j-a)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

T

δ=tp/T

tp

t (s)

p

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

Fig. 6: Relative variation of thermal impedance

junction to ambient versus pulse duration.

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