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STGWA40H65DFB Datasheet(PDF) 5 Page - STMicroelectronics

Part # STGWA40H65DFB
Description  High speed switching series
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGWA40H65DFB Datasheet(HTML) 5 Page - STMicroelectronics

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STGWA40H65DFB
Electrical characteristics
DocID029398 Rev 1
5/17
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Eon(1)
Turn-on
switching
energy
498
-
µJ
Eoff(2)
Turn-off
switching
energy
363
-
Ets
Total switching
energy
861
-
td(on)
Turn-on delay
time
VCE = 400 V, IC = 40 A, VGE = 15 V,
RG = 5
Ω, TJ = 175 °C (see Figure 28: "
Test circuit for inductive load switching" )
38
-
ns
tr
Current rise
time
14
-
(di/dt)on
Turn-on
current slope
2186
-
A/µs
td(off)
Turn-off-delay
time
141
-
ns
tf
Current fall
time
61
-
Eon(1)
Turn-on
switching
energy
1417
-
µJ
Eoff(2)
Turn-off
switching
energy
764
-
Ets
Total switching
energy
2181
-
Notes:
(1)Including the reverse recovery of the diode.
(2)Including the tail of the collector current.
Table 7: Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
trr
Reverse recovery
time
IF = 40 A, VR = 400 V, VGE = 15 V,
di/dt = 100 A/µs (see Figure 28: " Test
circuit for inductive load switching")
-
62
-
ns
Qrr
Reverse recovery
charge
-
99
-
nC
Irrm
Reverse recovery
current
-
3.3
-
A
dIrr/dt
Peak rate of fall of
reverse recovery
current during tb
-
187
-
A/µs
Err
Reverse recovery
energy
-
68
-
µJ
trr
Reverse recovery
time
IF = 40 A, VR = 400 V, VGE = 15 V,
TJ = 175 °C, di/dt = 100 A/µs
-
310
-
ns


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