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STGW80V60DF Datasheet(PDF) 6 Page - STMicroelectronics |
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STGW80V60DF Datasheet(HTML) 6 Page - STMicroelectronics |
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6 / 18 page  Electrical characteristics STGW80V60DF, STGWT80V60DF 6/18 DocID024362 Rev 2 Table 7. Diode switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit t rr Reverse recovery time I F = 80 A, V R = 400 V, di/dt = 1000 A/μs , V GE = 15 V , see Figure 28 -60 - ns Q rr Reverse recovery charge - 112 - nC I rrm Reverse recovery current - 3.6 - A dI rr/ /dt Peak rate of fall of reverse recovery current during t b - 140 - A/μs E rr Reverse recovery energy - 70 - μJ t rr Reverse recovery time I F = 80 A, V R = 400 V, di/dt = 1000 A/μs , V GE = 15 V; T J = 175 °C see Figure 28 - 340 - ns Q rr Reverse recovery charge - 2200 - nC I rrm Reverse recovery current - 13 - A dI rr/ /dt Peak rate of fall of reverse recovery current during t b -70 - A/μs E rr Reverse recovery energy - 880 - μJ |
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