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STGW60H65DFB Datasheet(PDF) 1 Page - STMicroelectronics |
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STGW60H65DFB Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 19 page This is information on a product in full production. April 2015 DocID024365 Rev 7 1/19 19 STGW60H65DFB, STGWA60H65DFB STGWT60H65DFB Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Datasheet - production data Figure 1. Internal schematic diagram Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE(sat) = 1.6 V (typ.) @ IC = 60 A • Tight parameters distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Photovoltaic inverters • High frequency converters Description These are IGBT devices developed using an advanced proprietary trench gate and field-stop structure. The devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. G (1) E (3) C (2, TAB) TO-247 1 2 3 TO-3P 1 2 3 TAB TO-247 long leads Table 1. Device summary Order code Marking Package Packing STGW60H65DFB GW60H65DFB TO-247 Tube STGWA60H65DFB G60H65DFB TO-247 long leads Tube STGWT60H65DFB GWT60H65DFB TO-3P Tube www.st.com |
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