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STGWT40H60DLFB Datasheet(PDF) 4 Page - STMicroelectronics |
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STGWT40H60DLFB Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 17 page Electrical characteristics STGW40H60DLFB, STGWT40H60DLFB 4/17 DocID024370 Rev 4 2 Electrical characteristics TJ = 25 °C unless otherwise specified. Table 4. Static characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)CES Collector-emitter breakdown voltage (VGE = 0) IC = 2 mA 600 V VCE(sat) Collector-emitter saturation voltage VGE = 15 V, IC = 40 A 1.6 2 V VGE = 15 V, IC = 40 A TJ = 125 °C 1.7 VGE = 15 V, IC = 40 A TJ = 175 °C 1.8 VF Forward on-voltage IF = 40 A 1.55 1.8 V IF = 40 A TJ = 125 °C 1.3 IF = 40 A TJ = 175 °C 1.25 VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V ICES Collector cut-off current (VGE = 0) VCE = 600 V 25 µA IGES Gate-emitter leakage current (VCE = 0) VGE = ± 20 V 250 nA Table 5. Dynamic characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Cies Input capacitance VCE = 25 V, f = 1 MHz, VGE = 0 -5412 - pF Coes Output capacitance - 198 - pF Cres Reverse transfer capacitance -107 - pF Qg Total gate charge VCC = 480 V, IC = 40 A, VGE = 15 V, see Figure 27 -210 - nC Qge Gate-emitter charge - 39 - nC Qgc Gate-collector charge - 82 - nC |
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