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STGP30H65F Datasheet(PDF) 4 Page - STMicroelectronics |
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STGP30H65F Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 13 page Electrical characteristics STGP30H65F 4/13 DocID025631 Rev 1 2 Electrical characteristics T J = 25 °C unless otherwise specified. Table 4. Static Symbol Parameter Test condition Min. Typ. Max. Unit V (BR)CES Collector-emitter breakdown voltage (V GE = 0) I C = 2 mA 650 V V CE(sat) Collector-emitter saturation voltage V GE = 15 V, I C = 30 A 2.0 2.4 V V GE = 15 V, I C = 30 A T J = 175 °C 2.4 V V GE(th) Gate threshold voltage V CE = V GE , I C = 1 mA 5.0 6.0 7.0 V I CES Collector cut-off current (V GE = 0) V CE = 650 V 25 μA I GES Gate-emitter leakage current (V CE = 0) V GE = ± 20 V 250 nA Table 5. Dynamic Symbol Parameter Test condition Min. Typ. Max. Unit C ies Input capacitance V CE = 25 V, f = 1 MHz, V GE = 0 - 3600 - pF C oes Output capacitance 130 pF C res Reverse transfer capacitance 65 pF Q g Total gate charge V CC = 400 V, I C = 30 A, V GE = 15 V (see Figure 20: Gate charge test circuit) -105 - nC Q ge Gate-emitter charge - 30 - nC Q gc Gate-collector charge - 35 - nC |
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