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STGW80V60F Datasheet(PDF) 8 Page - STMicroelectronics

Part # STGW80V60F
Description  Trench gate field-stop IGBT, V series 600 V, 80 A very high speed
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGW80V60F Datasheet(HTML) 8 Page - STMicroelectronics

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Electrical characteristics
STGFW80V60F, STGW80V60F, STGWT80V60F
8/19
DocID026386 Rev 1
Figure 14. Normalized VGE(th) vs junction
temperature
Figure 15. Normalized V(BR)CES vs. junction
temperature
Figure 16. Capacitance variation
Figure 17. Gate charge vs. gate-emitter voltage
Figure 18. Switching loss vs collector current
Figure 19. Switching loss vs gate resistance
VGE(th)
1.1
1.0
0.6
-50
TJ(°C)
(norm)
0
50
100
150
IC= 1mA
VCE= VGE
0.7
0.8
0.9
GIPD041120131351FSR
V(BR)CES
1.1
1.0
0.9
-50
TJ(°C)
(norm)
0
50
100
150
IC= 2mA
GIPD041120131353FSR
C
100
VCE(V)
(pF)
0.1
1
10
Cies
1000
10000
Coes
Cres
GIPD041120131358FSR
VGE
8
0
Qg(nC)
(V)
0
100
IC= 80A
VCC= 480V
4
200
12
300
16
400
500
GIPD041120131406FSR
E
0
IC(A)
(μJ)
20
40
60
2000
80
100
4000
EON
6000
VCC = 400V, VGE = 15V,
RG = 10Ω, TJ = 175°C
120
EOFF
140
8000
10000
GIPD041120131413FSR
E
0
RG(Ω)
(μJ)
010
20
2000
4000
6000
30
40
8000
EOFF
VCC = 400 V, VGE = 15 V,
IC = 80 A, TJ = 175 °C
EON
GIPD041120131419FSR


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