STGW20V60F datasheet(7/19 Pages) STMICROELECTRONICS

Part #	STGW20V60F

Description	600 V, 20 A very high speed trench gate field-stop IGBT

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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7 / 19 page

DocID024851 Rev 1

7/19

STGFW20V60F, STGW20V60F, STGWT20V60F

Electrical characteristics

Figure 6. Output characteristics (TJ = 25 °C)

Figure 7. Output characteristics (TJ = 175 °C)

Figure 8. VCE(SAT) vs. junction temperature

Figure 9. VCE(SAT) vs. collector current

Figure 10. Safe operating area for TO-247 and

TO-3P

Figure 11. Safe operating area for TO-3PF

AM17171v1

9 V

11 V

13 V

15 V

0

10

20

30

40

50

60

70

01234

Ic (A)

VCE (V)

VGE =7 V

AM17172v1

9 V

11 V

13 V

15 V

0

10

20

30

40

50

60

70

01234

Ic (A)

VCE (V)

VGE =7 V

AM17176v1

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

-50 -25 0

25 50 75 100 125 150 175

VCE(sat)

(V)

TJ(ºC)

I

C 40A

I

C = 20A

I

C = 10A

V

GE = 15V

AM17177v1

0.8

1.2

1.6

2.0

2.4

2.8

3.2

3.6

4.0

0

1020304050607080

VCE(sat)

(V)

IC (A)

T

J = 25 °C

T

J = - 40°C

T

J = 175°C

V

GE =15V

AM17179v1

0.01

0.1

1

10

110

100

IC (A)

VCE (V)

10 μs

100 μs

1 ms

(single pulse T

C =25 °C,

T

J <=175 °C; VGE =15 V)

10 µs

100 µs

1 ms

(single pulse TC=25°C,

TJ<=175°C; VGE=15V)

AM17179v2

0.01

0.1

1

10

110

100

IC (A)

VCE (V)

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