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STGF19NC60SD Datasheet(PDF) 5 Page - STMicroelectronics

Part # STGF19NC60SD
Description  20 A, 600 V fast IGBT with Ultrafast diode
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGF19NC60SD Datasheet(HTML) 5 Page - STMicroelectronics

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STGF19NC60SD, STGP19NC60SD
Electrical characteristics
Doc ID 13689 Rev 4
5/15
Table 6.
Switching on/off (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 480V, IC = 12A
RG= 10Ω, VGE= 15V,
Figure 21
-
17.5
6.2
1870
-
ns
ns
A/µs
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 480V, IC = 12A
RG= 10Ω, VGE= 15V,
Tj = 125°C
Figure 21
-
17
6.5
1700
-
ns
ns
A/µs
tr(Voff)
td(Voff)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCC = 480V, IC = 12A
RG= 10Ω, VGE= 15V,
Figure 21
-
90
175
215
-
ns
ns
ns
tr(Voff)
td(Voff)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCC = 480V, IC = 12A
RG= 10Ω, VGE= 15V,
Tj = 125°C
Figure 21
-
155
245
290
-
ns
ns
ns
Table 7.
Switching energy (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Eon
Eoff
(1)
Ets
1.
Turn-off losses include also the tail of the collector current
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 480 V, IC = 12 A
RG= 10 Ω, VGE= 15 V,
Figure 19
-
135
815
995
-
µJ
µJ
µJ
Eon
Eoff
(1)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 480 V, IC = 12 A
RG= 10 Ω, VGE= 15 V,
Tj = 125 °C
Figure 19
-
200
1175
1375
-
µJ
µJ
µJ
Table 8.
Collector-emitter diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
VF
Forward on-voltage
IF = 12 A
IF = 12 A, Tj = 125 °C
2.3
2.0
V
V
trr
Qrr
Irrm
Reverse recovery time
Reverse recovery charge
Reverse recovery current
IF = 12 A, VR =40 V,
di/dt=100 A/µs
Figure 22
31
29.5
1.9
ns
nC
A
trr
Qrr
Irrm
Reverse recovery time
Reverse recovery charge
Reverse recovery current
IF = 12 A, VR =40 V,
di/dt=100 A/µs, Tj = 125 °C
Figure 22
48.5
70.5
3
ns
nC
A


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