UF28100M_17 datasheet(1/4 Pages) MA-COM

Part #	UF28100M

Description	RF Power MOSFET Transistor

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Manufacturer	MA-COM [M/A-COM Technology Solutions, Inc.]

Direct Link	http://www.macomtech.com

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RF Power MOSFET Transistor

100W, 100-500 MHz, 28V

Rev. V1

UF28100M

1

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

1

Features

 N-channel enhancement mode device

 DMOS structure

 Lower capacitances for broadband operation

 High saturated output power

 Lower noise figure than competitive devices

 RoHS Compliant

ABSOLUTE MAXIMUM RATINGS AT 25° C

Parameter

Rating

Symbol

Units

Drain-Source Voltage

65

VDS

V

Gate-Source Voltage

20

VGS

V

Drain-Source Current

12*

IDS

A

Power Dissipation

250

PD

W

Junction Temperature

200

TJ

°C

Storage Temperature

-55 to +150

TSTG

°C

Thermal Resistance

0.7

θJC

°C/W

ELECTRICAL CHARACTERISTICS AT 25°C

Parameter

Symbol

Min

Max

Units

Test Conditions

Drain-Source Breakdown Voltage

BVDSS

65

-

V

VGS = 0.0 V , IDS = 15.0 mA

Drain-Source Leakage Current

IDSS

-

3.0

mA

VGS = 28.0 V , VGS = 0.0 V

Gate-Source Leakage Current

IGSS

-

3.0

µA

VGS = 20.0 V , VDS = 0.0 V

Gate Threshold Voltage

VGS(TH)

2.0

6.0

V

VDS = 10.0 V , IDS = 300.0 mA

Forward Transconductance

GM

1.5

-

S

VDS = 10.0 V , IDS 3000.0 mA , Δ VGS = 1.0V, 80 μs Pulse

Input Capacitance

CISS

-

135

pF

VDS = 28.0 V , F = 1.0 MHz

Output Capacitance

COSS

-

90

pF

VDS = 28.0 V , F = 1.0 MHz

Reverse Capacitance

CRSS

-

24

pF

VDS = 28.0 V , F = 1.0 MHz

Power Gain

GP

10

-

dB

VDD = 28.0 V, IDQ = 600.0 mA, POUT = 100.0 W F =500 MHz

Drain Efficiency

ŋD

50

-

%

VDD = 28.0 V, IDQ = 600.0 mA, POUT = 100.0 W F =500 MHz

Return Loss

RL

10

-

dB

VDD = 28.0 V, IDQ = 600.0 mA, POUT = 100.0 W F =500 MHz

Load Mismatch Tolerance

VSWR-T

-

30:1

-

VDD = 28.0 V, IDQ = 600.0 mA, POUT = 100.0 W F =500 MHz

F (MHz)

ZIN (Ω)

ZLOAD (Ω)

100

4.5-j6.0

14.5+j0.5

300

2.25-j1.75

7.5j1.0

500

1.5+j5.5

3.5+j3.5

VDD=28V, IDQ=600 Ma, POUT =100.0 W

TYPICAL DEVICE IMPEDANCES

ZIN is the series equivalent input impedance of the device from gate to gate.

ZLOAD is the optimum series equivalent load impedance as measured from drain to drain.

*Per side

PACKAGE OUTLINE

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