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UF28100M Datasheet(PDF) 1 Page - M/A-COM Technology Solutions, Inc. |
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UF28100M Datasheet(HTML) 1 Page - M/A-COM Technology Solutions, Inc. |
1 / 4 page RF Power MOSFET Transistor 100W, 100-500 MHz, 28V Rev. V1 UF28100M 1 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 1 Features N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power Lower noise figure than competitive devices RoHS Compliant ABSOLUTE MAXIMUM RATINGS AT 25° C Parameter Rating Symbol Units Drain-Source Voltage 65 VDS V Gate-Source Voltage 20 VGS V Drain-Source Current 12* IDS A Power Dissipation 250 PD W Junction Temperature 200 TJ °C Storage Temperature -55 to +150 TSTG °C Thermal Resistance 0.7 θJC °C/W ELECTRICAL CHARACTERISTICS AT 25°C Parameter Symbol Min Max Units Test Conditions Drain-Source Breakdown Voltage BVDSS 65 - V VGS = 0.0 V , IDS = 15.0 mA Drain-Source Leakage Current IDSS - 3.0 mA VGS = 28.0 V , VGS = 0.0 V Gate-Source Leakage Current IGSS - 3.0 µA VGS = 20.0 V , VDS = 0.0 V Gate Threshold Voltage VGS(TH) 2.0 6.0 V VDS = 10.0 V , IDS = 300.0 mA Forward Transconductance GM 1.5 - S VDS = 10.0 V , IDS 3000.0 mA , Δ VGS = 1.0V, 80 μs Pulse Input Capacitance CISS - 135 pF VDS = 28.0 V , F = 1.0 MHz Output Capacitance COSS - 90 pF VDS = 28.0 V , F = 1.0 MHz Reverse Capacitance CRSS - 24 pF VDS = 28.0 V , F = 1.0 MHz Power Gain GP 10 - dB VDD = 28.0 V, IDQ = 600.0 mA, POUT = 100.0 W F =500 MHz Drain Efficiency ŋD 50 - % VDD = 28.0 V, IDQ = 600.0 mA, POUT = 100.0 W F =500 MHz Return Loss RL 10 - dB VDD = 28.0 V, IDQ = 600.0 mA, POUT = 100.0 W F =500 MHz Load Mismatch Tolerance VSWR-T - 30:1 - VDD = 28.0 V, IDQ = 600.0 mA, POUT = 100.0 W F =500 MHz F (MHz) ZIN (Ω) ZLOAD (Ω) 100 4.5-j6.0 14.5+j0.5 300 2.25-j1.75 7.5j1.0 500 1.5+j5.5 3.5+j3.5 VDD=28V, IDQ=600 Ma, POUT =100.0 W TYPICAL DEVICE IMPEDANCES ZIN is the series equivalent input impedance of the device from gate to gate. ZLOAD is the optimum series equivalent load impedance as measured from drain to drain. *Per side PACKAGE OUTLINE |
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