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STGP14N60D Datasheet(PDF) 4 Page - STMicroelectronics |
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STGP14N60D Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 11 page Obsolete Product(s) - Obsolete Product(s) Electrical characteristics STGF14N60D, STGP14N60D 4/11 2 Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 4. Static Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)CES Collector-emitter breakdown voltage (VGE= 0) IC= 1 mA 600 V VCE(sat) Collector-emitter saturation voltage VGE= 15 V, IC= 7 A VGE= 15 V, IC= 7 A, TC= 125 °C 2.1 1.8 V V VGE(th) Gate threshold voltage VCE= VGE, IC= 250 µA 4.5 6.5 V IGES Gate-emitter leakage current (VCE = 0) VGE= ±20 V, TC= 125 °C ±100 nA ICES Collector cut-off current (VGE = 0) VCE= 600 V VCE= 600 V, TC= 125 °C 150 1 µA mA gfs (1) 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Forward transconductance VCE = 15 V , IC = 7 A 3.2 S Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Cies Coes Cres Input capacitance Output capacitance Reverse transfer capacitance VCE = 25 V, f = 1 MHz, VGE= 0 TBD TBD TBD pF pF pF Qg Qge Qgc Total gate charge Gate-emitter charge Gate-collector charge VCE = 390 V, IC = 7 A, VGE = 15 V (see Figure 3) TBD TBD TBD nC nC nC |
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