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STGW40V60F Datasheet(PDF) 4 Page - STMicroelectronics |
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STGW40V60F Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 24 page Electrical characteristics STGB40V60F, STGFW40V60F, STGP40V60F, STGW40V60F 4/24 DocID024700 Rev 2 2 Electrical characteristics TJ = 25 °C unless otherwise specified. Table 4. Static characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)CES Collector-emitter breakdown voltage (VGE = 0) IC = 2 mA 600 V VCE(sat) Collector-emitter saturation voltage VGE = 15 V, IC = 40 A 1.8 2.3 V VGE = 15 V, IC = 40 A TJ = 125 °C 2.15 VGE = 15 V, IC = 40 A TJ = 175 °C 2.35 VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V ICES Collector cut-off current (VGE = 0) VCE = 600 V 25 µA IGES Gate-emitter leakage current (VCE = 0) VGE = ± 20 V 250 nA Table 5. Dynamic characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Cies Input capacitance VCE = 25 V, f = 1 MHz, VGE = 0 -5400 - pF Coes Output capacitance - 220 - pF Cres Reverse transfer capacitance -180 - pF Qg Total gate charge VCC = 480 V, IC = 40 A, VGE = 15 V, see Figure 28 -226 - nC Qge Gate-emitter charge - 38 - nC Qgc Gate-collector charge - 95 - nC |
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