STGP20V60F datasheet(1/18 Pages) STMICROELECTRONICS

Part #	STGP20V60F

Description	600 V, 20 A very high speed trench gate field-stop IGBT

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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1 / 18 page

This is information on a product in full production.

July 2013

DocID024890 Rev 1

1/18

18

STGB20V60F,

STGP20V60F

600 V, 20 A very high speed

trench gate field-stop IGBT

Datasheet - production data

Figure 1. Internal schematic diagram

Features

• Maximum junction temperature: T

J

= 175 °C

• Very high speed switching series

• Tail-less switching off

• Low saturation voltage: V

CE(sat)

= 1.8 V (typ.)

@ I

C

= 20 A

• Tight parameters distribution

• Safe paralleling

• Low thermal resistance

• Lead free package

Applications

• Photovoltaic inverters

• Uninterruptible power supply

• Welding

• Power factor correction

• Very high frequency converters

Description

This device is an IGBT developed using an

advanced proprietary trench gate and field stop

structure. The device is part of the "V" series of

IGBTs, which represent an optimum compromise

between conduction and switching losses to

maximize the efficiency of very high frequency

converters. Furthermore, a positive V

CE(sat)

temperature coefficient and very tight parameter

distribution result in safer paralleling operation.

C (2, TAB)

E (3)

G (1)

D2PAK

1

3

TAB

1

2

3

TAB

TO-220

Table 1. Device summary

Order code

Marking

Package

Packaging

STGB20V60F

GB20V60F

D

2

PAK

Tape and reel

STGP20V60F

GP20V60F

TO-220

Tube

www.st.com

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