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STGB20V60DF Datasheet(PDF) 9 Page - STMicroelectronics |
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STGB20V60DF Datasheet(HTML) 9 Page - STMicroelectronics |
9 / 23 page DocID024360 Rev 3 9/23 STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Electrical characteristics Figure 20. Switching times vs. collector current Figure 21. Switching times vs. gate resistance AM17188v1 1 10 100 010 20 30 40 ts (ns) Ic (A) V CC = 400V, VGE = 15V, Tj =175 °C, Rg = 10 Ω t doff t don t r t f AM17189v1 t f 1 10 100 0 10203040 ts (ns) Rg (Ω) VCC= 400V, VGE= 15V, Tj=175 °C Ic = 40 A t doff t don t r Figure 22. Reverse recovery current vs. diode current slope Figure 23. Reverse recovery time vs. diode current slope Figure 24. Reverse recovery charge vs. diode current slope Figure 25. Reverse recovery energy vs. diode current slope AM17190v1 0 10 20 30 40 50 0 500 1000 1500 2000 2500 Irm (A) di/dt (A/μs) V r = 400V, IF = 20 A 25°C 175 °C AM17191v1 0 20 40 60 80 100 120 140 160 180 0 500 1000 1500 2000 2500 trr (μs) di/dt (A/μs) V r = 400V, IF = 20 A 25 ºC 175 ºC AM17192v1 0 200 400 600 800 1000 1200 1400 0 500 1000 1500 2000 2500 Qrr (nC) di/dt (A/μs) V r = 400V, IF = 40 A 25°C 175°C AM17193v1 0 100 200 300 400 500 600 700 800 0 500 1000 1500 2000 2500 Err (μJ) di/dt (A/μs) V r = 400 V, IF = 20 A 175°C 25°C |
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