STGF10H60DF datasheet(3/24 Pages) STMICROELECTRONICS

Part #	STGF10H60DF

Description	Trench gate field-stop IGBT, H series 600 V, 10 A high speed

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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STGB10H60DF, STGF10H60DF, STGP10H60DF

Electrical ratings

24

1

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

TO-220

D²PAK

TO-220FP

Unit

V

CES

Collector-emitter voltage (V

GE

= 0)

600

V

I

C

Continuous collector current at T

C

= 25 °C

20

(1)

1.

Limited by maximum junction temperature.

A

Continuous collector current at T

C

= 100 °C

10

(1)

A

I

CP

(2)

2.

Pulse width limited by maximum junction temperature.

Pulsed collector current

40

(1)

A

V

GE

Gate-emitter voltage

±20

V

I

F

Continuous forward current T

C

= 25 °C

20

(1)

A

Continuous forward current at T

C

= 100 °C

10

(1)

I

FP

(2)

Pulsed forward current

40

(1)

A

P

TOT

Total dissipation at T

C

= 25 °C

115

30

W

T

STG

Storage temperature range

- 55 to 150

°C

T

J

Operating junction temperature

- 55 to 175

Table 3. Thermal data

Symbol

Parameter

TO-220

D²PAK

TO-220FP

Unit

R

thJC

Thermal resistance junction-case IGBT

1.3

5

°C/W

R

thJC

Thermal resistance junction-case diode

2.78

6.25

°C/W

R

thJA

Thermal resistance junction-ambient

62.5

°C/W

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STGF10H60DF Datasheet(PDF) 3 Page - STMicroelectronics

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