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STGB7H60DF Datasheet(PDF) 1 Page - STMicroelectronics |
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STGB7H60DF Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 25 page This is information on a product in full production. June 2015 DocID027555 Rev 2 1/25 STGB7H60DF, STGF7H60DF, STGP7H60DF Trench gate field-stop IGBT, H series 600 V, 7 A high speed Datasheet - production data Figure 1. Internal schematic diagram Features • High speed switching • Tight parameters distribution • Safe paralleling • Low thermal resistance • Short-circuit rated • Ultrafast soft recovery antiparallel diode Applications • Motor control • UPS, PFC Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in easier paralleling operation. TO-220 D²PAK 1 2 3 TAB 1 3 TAB TO-220FP 1 2 3 C (2, TAB) E (3) G (1) Table 1. Device summary Order codes Marking Packages Packaging STGB7H60DF GB7H60DF D²PAK Tape and reel STGF7H60DF GF7H60DF TO-220FP Tube STGP7H60DF GP7H60DF TO-220 Tube www.st.com |
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