STGB5H60DF datasheet(5/30 Pages) STMICROELECTRONICS

Part #	STGB5H60DF

Description	Trench gate field-stop IGBT, H series 600 V, 5 A high speed

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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STGB5H60DF, STGD5H60DF, STGF5H60DF, STGP5H60DF

Electrical characteristics

30

Table 6. Switching characteristics (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VCE = 400 V, IC = 5 A,

RG = 47 Ω, VGE = 15 V

-30

-

ns

tr

Current rise time

-

10.8

-

ns

(di/dt)on

Turn-on current slope

-

370

-

A/µs

td(on)

Turn-on delay time

VCE = 400 V, IC = 5 A,

RG = 47 Ω, VGE = 15 V

TJ = 175 °C

-28

-

ns

tr

Current rise time

-11-

ns

(di/dt)on

Turn-on current slope

-

363

-

A/µs

tr(Voff)

Off voltage rise time

VCE = 400 V, IC = 5 A,

RG = 47 Ω, VGE = 15 V

-29

-

ns

td(off)

Turn-off delay time

-

140

-

ns

tf

Current fall time

-

95

-

ns

tr(Voff)

Off voltage rise time

VCE = 400 V, IC = 5 A,

RG = 47 Ω, VGE = 15 V

TJ = 175 °C

-44

-

ns

td(off)

Turn-off delay time

-

146

-

ns

tf

Current fall time

-

134

-

ns

tsc

Short-circuit withstand time

VCC ≤ 360 V, VGE = 15 V,

RG = 47 Ω

-5-

µs

Table 7. Switching energy (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Eon (1)

1.

Energy losses include reverse recovery of the diode.

Turn-on switching losses

VCE = 400 V, IC = 5 A,

RG = 47 Ω, VGE = 15 V

-56

-

µJ

Eoff

(2)

2. Turn-off losses include also the tail of the collector current.

Turn-off switching losses

-

78.5

-

µJ

Ets

Total switching losses

-

134.5

-

µJ

Eon (1)

Turn-on switching losses

VCE = 400 V, IC = 5 A,

RG = 47 Ω, VGE = 15 V

TJ = 175 °C

-87

-

µJ

Eoff

(2)

Turn-off switching losses

-

134

-

µJ

Ets

Total switching losses

-

221

-

µJ

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