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SN75HVD3082EDRG4 Datasheet(PDF) 3 Page - Texas Instruments

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Part # SN75HVD3082EDRG4
Description  Low-Power RS-485 Transceivers, Available in a Small MSOP-8 Package
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

SN75HVD3082EDRG4 Datasheet(HTML) 3 Page - Texas Instruments

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DE
RE
8
D
5
6
7
R
V
CC
GND
1
4
3
2
A
B
3
SN65HVD3082E, SN75HVD3082E, SN65HVD3085E, SN65HVD3088E
www.ti.com
SLLS562I – AUGUST 2009 – REVISED SEPTEMBER 2016
Product Folder Links: SN65HVD3082E SN75HVD3082E SN65HVD3085E SN65HVD3088E
Submit Documentation Feedback
Copyright © 2009–2016, Texas Instruments Incorporated
5 Pin Configuration and Functions
D, P, and DGK Packages
8-Pin SOIC, VSSOP, and PDIP
Top View
Pin Functions
PIN
TYPE
DESCRIPTION
NAME
NO.
A
6
Bus input/output
Driver output or receiver input (complementary to B)
B
7
Bus input/output
Driver output or receiver input (complementary to A)
D
4
Digital input
Driver data input
DE
3
Digital input
Driver enable, active high
GND
5
Reference potential
Local device ground
R
1
Digital output
Receive data output
RE
2
Digital input
Receiver enable, active low
VCC
8
Supply
4.5-V to 5.5-V supply
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
All voltage values, except differential I/O bus voltages, are with respect to network ground terminal.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range unless otherwise noted
(1) (2)
MIN
MAX
UNIT
Supply voltage, VCC
–0.5
7
V
Voltage at A or B
–9
14
V
Voltage at any logic pin
–0.3
VCC + 0.3
V
Receiver output current
–24
24
mA
Voltage input, transient pulse, A and B, through 100
Ω (see Figure 20)
–50
50
V
Junction Temperature, TJ
170
°C
Storage temperature, Tstg
150
°C
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
(3)
Tested in accordance with IEC 61000-4-4.
6.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic
discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-
001(1)
Bus pins and GND
±15000
V
All pins
±4000
Charged-device model (CDM), per JEDEC specification JESD22-C101(2)
±1000
Electrical Fast Transient/Burst, A, B, and GND(3)
±4000


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