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SN75HVD3082EDRG4 Datasheet(PDF) 3 Page - Texas Instruments |
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SN75HVD3082EDRG4 Datasheet(HTML) 3 Page - Texas Instruments |
3 / 36 page DE RE 8 D 5 6 7 R V CC GND 1 4 3 2 A B 3 SN65HVD3082E, SN75HVD3082E, SN65HVD3085E, SN65HVD3088E www.ti.com SLLS562I – AUGUST 2009 – REVISED SEPTEMBER 2016 Product Folder Links: SN65HVD3082E SN75HVD3082E SN65HVD3085E SN65HVD3088E Submit Documentation Feedback Copyright © 2009–2016, Texas Instruments Incorporated 5 Pin Configuration and Functions D, P, and DGK Packages 8-Pin SOIC, VSSOP, and PDIP Top View Pin Functions PIN TYPE DESCRIPTION NAME NO. A 6 Bus input/output Driver output or receiver input (complementary to B) B 7 Bus input/output Driver output or receiver input (complementary to A) D 4 Digital input Driver data input DE 3 Digital input Driver enable, active high GND 5 Reference potential Local device ground R 1 Digital output Receive data output RE 2 Digital input Receiver enable, active low VCC 8 Supply 4.5-V to 5.5-V supply (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) All voltage values, except differential I/O bus voltages, are with respect to network ground terminal. 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range unless otherwise noted (1) (2) MIN MAX UNIT Supply voltage, VCC –0.5 7 V Voltage at A or B –9 14 V Voltage at any logic pin –0.3 VCC + 0.3 V Receiver output current –24 24 mA Voltage input, transient pulse, A and B, through 100 Ω (see Figure 20) –50 50 V Junction Temperature, TJ 170 °C Storage temperature, Tstg 150 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. (3) Tested in accordance with IEC 61000-4-4. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS- 001(1) Bus pins and GND ±15000 V All pins ±4000 Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000 Electrical Fast Transient/Burst, A, B, and GND(3) ±4000 |
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