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SI7356DP Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SI7356DP
Description  N-Channel 30-V (D-S) MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI7356DP Datasheet(HTML) 2 Page - Vishay Siliconix

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Si7356DP
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72222
S-32039—Rev. B, 13-Oct-03
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 mA
1.0
3.0
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
"100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 24 V, VGS = 0 V
1
mA
Zero Gate Voltage Drain Current
IDSS
VDS = 24 V, VGS = 0 V, TJ = 55_C
5
mA
On-State Drain CurrentNO TAG
ID(on)
VDS w 5 V, VGS = 10 V
30
A
Drain-Source On-State ResistanceNO TAG
rDS(on)
VGS = 10 V, ID = 25 A
0.0024
0.003
W
Drain-Source On-State ResistanceNO TAG
rDS(on)
VGS = 4.5 V, ID = 19 A
0.0032
0.004
W
Forward TransconductanceNO TAG
gfs
VDS = 15 V, ID = 25 A
110
S
Diode Forward VoltageNO TAG
VSD
IS = 2.9 A, VGS = 0 V
0.72
1.1
V
DynamicNO TAG
Total Gate Charge
Qg
45
70
Gate-Source Charge
Qgs
VDS = 15 V, VGS = 4.5 V, ID = 20 A
20
nC
Gate-Drain Charge
Qgd
16
Gate Resistance
RG
1.1
W
Turn-On Delay Time
td(on)
27
40
Rise Time
tr
VDD = 15 V, RL = 15 W
21
35
Turn-Off Delay Time
td(off)
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
107
160
ns
Fall Time
tf
43
65
Source-Drain Reverse Recovery Time
trr
IF = 2.9 A, di/dt = 100 A/ms
45
70
Notes
a.
Pulse test; pulse width v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
10
20
30
40
50
60
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
10
20
30
40
50
60
0
2468
10
VGS = 10 thru 4 V
25_C
TC = 125_C
-55_C
3 V
Output Characteristics
Transfer Characteristics
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)


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