Publication Order Number:

NTF3055L108/D

© Semiconductor Components Industries, LLC, 2016

July, 2016 − Rev. 9

1

NTF3055L108,

NVF3055L108

Power MOSFET

3.0 A, 60 V, Logic Level, N−Channel

SOT−223

Designed for low voltage, high speed switching applications in power

supplies, converters and power motor controls and bridge circuits.

Features

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

Applications

Rating

Symbol

Value

Unit

Drain−to−Source Voltage

60

Vdc

60

Vdc

Gate−to−Source Voltage

− Continuous

± 15

± 20

Vdc

Vpk

Drain Current

3.0

1.4

9.0

Adc

Apk

Derate above 25

°C

2.1

1.3

0.014

Watts

Watts

W/

°C

Operating and Storage Temperature Range

−55

to 175

°C

Single Pulse Drain−to−Source Avalanche

74

mJ

Thermal Resistance

−Junction−to−Ambient (Note 1)

−Junction−to−Ambient (Note 2)

72.3

114

°C/W

Maximum Lead Temperature for Soldering

Purposes, 1/8

″ from case for 10 seconds

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. When surface mounted to an FR4 board using 1

″ pad size, 1 oz.

2. When surface mounted to an FR4 board using minimum recommended pad

D

G

S

1

2

3

4

3.0 A, 60 V

N−Channel

SOT−223

CASE 318E

STYLE 3

MARKING DIAGRAM

AYW

3055L

G

G

3055L

= Device Code

A

= Assembly Location

Y

= Year

W

= Work Week

G

= Pb−Free Package

(Note: Microdot may be in either location)

PIN ASSIGNMENT

3

2

1

4

Gate

Drain

Source

Drain

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

www.onsemi.com