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NVF3055L108T1G Datasheet(PDF) 1 Page - ON Semiconductor |
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NVF3055L108T1G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 6 page Publication Order Number: NTF3055L108/D © Semiconductor Components Industries, LLC, 2016 July, 2016 − Rev. 9 1 NTF3055L108, NVF3055L108 Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • NVF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Applications • Power Supplies • Converters • Power Motor Controls • Bridge Circuits MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS 60 Vdc Drain−to−Gate Voltage (RGS = 1.0 MW) VDGR 60 Vdc Gate−to−Source Voltage − Continuous − Non−repetitive (tp ≤ 10 ms) VGS ± 15 ± 20 Vdc Vpk Drain Current − Continuous @ TA = 25°C (Note 1) − Continuous @ TA = 100°C (Note 2) − Single Pulse (tp ≤ 10 ms) ID ID IDM 3.0 1.4 9.0 Adc Apk Total Power Dissipation @ TA = 25°C (Note 1) Total Power Dissipation @ TA = 25°C (Note 2) Derate above 25 °C PD 2.1 1.3 0.014 Watts Watts W/ °C Operating and Storage Temperature Range TJ, Tstg −55 to 175 °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 5.0 Vdc, IL(pk) = 7.0 Apk, L = 3.0 mH, VDS = 60 Vdc) EAS 74 mJ Thermal Resistance −Junction−to−Ambient (Note 1) −Junction−to−Ambient (Note 2) RqJA RqJA 72.3 114 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8 ″ from case for 10 seconds TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. When surface mounted to an FR4 board using 1 ″ pad size, 1 oz. (Cu. Area 1 in2). 2. When surface mounted to an FR4 board using minimum recommended pad size, 2 oz. (Cu. Area 0.272 in2). D G S 1 2 3 4 3.0 A, 60 V RDS(on) = 120 mW N−Channel SOT−223 CASE 318E STYLE 3 MARKING DIAGRAM AYW 3055L G G 3055L = Device Code A = Assembly Location Y = Year W = Work Week G = Pb−Free Package (Note: Microdot may be in either location) PIN ASSIGNMENT 3 2 1 4 Gate Drain Source Drain See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. ORDERING INFORMATION www.onsemi.com |
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