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NTD4904NT4G Datasheet(PDF) 3 Page - ON Semiconductor |
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NTD4904NT4G Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 8 page NTD4904N http://onsemi.com 3 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 30 A TJ = 25°C 0.84 1.1 V TJ = 125°C 0.7 Reverse Recovery Time tRR VGS = 0 V, dIs/dt= 100 A/ms, IS = 30 A 40.4 ns Charge Time ta 20.5 Discharge Time tb 19.9 Reverse Recovery Time QRR 35 nC PACKAGE PARASITIC VALUES Source Inductance (Note 5) LS TA = 25°C 2.48 nH Drain Inductance, DPAK LD 0.0164 Drain Inductance, IPAK (Note 5) LD 1.88 Gate Inductance (Note 5) LG 4.9 Gate Resistance RG 1.0 2.0 W Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Assume terminal length of 110 mils. |
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