© Semiconductor Components Industries, LLC, 2014

September, 2014 − Rev. 3

1

Publication Order Number:

NTD5867NL/D

NTD5867NL

N-Channel Power MOSFET

60 V, 20 A, 39 mW

Features

Compliant

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

60

V

Gate−to−Source Voltage − Continuous

±20

V

Gate−to−Source Voltage

±30

V

Continuous Drain

Steady

State

20

A

13

Power Dissipation

36

W

Pulsed Drain Current

76

A

Operating Junction and Storage Temperature

− 55 to

150

°C

Source Current (Body Diode)

20

A

Single Pulse Drain−to−Source Avalanche

18

mJ

Lead Temperature for Soldering Purposes

(1/8

″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction−to−Case (Drain)

3.5

°C/W

Junction−to−Ambient − Steady State (Note 1)

45

1. Surface−mounted on FR4 board using 1 in sq pad size

(Cu area = 1.127 in sq [2 oz] including traces.

DPAK

CASE 369AA

(Surface Mount)

STYLE 2

MARKING DIAGRAMS

& PIN ASSIGNMENT

60 V

39 m

W @ 10 V

50 m

W @ 4.5 V

http://onsemi.com

1 2

3

4

See detailed ordering and shipping information on page 5 of

this data sheet.

ORDERING INFORMATION

1

Gate

2

Drain 3

Source

4

Drain

A

= Assembly Location*

Y

= Year

WW

= Work Week

5867NL = Device Code

G

= Pb−Free Package

G

S

N−Channel

D

IPAK

CASE 369D

(Straight Lead)

STYLE 2

1

2

3

4

4

Drain

2

Drain

1

Gate

3

Source

20 A

18 A

* The Assembly Location code (A) is front side

optional. In cases where the Assembly Location is

stamped in the package, the front side assembly

code may be blank.