NTD5865NL

http://onsemi.com

2

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

60

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

55

mV/

°C

Zero Gate Voltage Drain Current

1.0

mA

100

Gate−to−Source Leakage Current

±100

nA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

1.0

2.0

V

Negative Threshold Temperature Co-

efficient

5.6

mV/

°C

Drain−to−Source on Resistance

13

16

m

W

Drain−to−Source on Resistance

16

19

m

W

Forward Transconductance

gFS

15

S

CHARGES, CAPACITANCES AND GATE RESISTANCES

Input Capacitance

1400

pF

Output Capacitance

137

Reverse Transfer Capacitance

95

Total Gate Charge

29

nC

Threshold Gate Charge

1.1

Gate−to−Source Charge

4

Gate−to−Drain Charge

8

Total Gate Charge

15

nC

Gate Resistance

1.3

W

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

8.4

ns

Rise Time

12.4

Turn−Off Delay Time

26

Fall Time

4.4

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

0.95

1.2

V

0.85

Reverse Recovery Time

20

ns

Charge Time

ta

13

Discharge Time

tb

7

Reverse Recovery Charge

13

nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperatures.