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SI4539ADY Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SI4539ADY
Description  N- and P-Channel 30-V (D-S) MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI4539ADY Datasheet(HTML) 2 Page - Vishay Siliconix

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Si4539ADY
Vishay Siliconix
www.vishay.com
2-2
Document Number: 71131
S-03951—Rev. B, 26-May-03
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 mA
N-Ch
1.0
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 mA
P-Ch
- 1.0
V
Gate Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
N-Ch
"100
nA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
P-Ch
"100
nA
VDS = 24 V, VGS = 0 V
N-Ch
1
Zero Gate Voltage Drain Current
IDSS
VDS = - 24 V, VGS = 0 V
P-Ch
-1
mA
Zero Gate Voltage Drain Current
IDSS
VDS = 24 V, VGS = 0 V, TJ = 55_C
N-Ch
5
mA
VDS = - 24 V, VGS = 0 V, TJ = 55_C
P-Ch
-5
On State Drain Currenta
ID( )
VDS w 5 V, VGS = 10 V
N-Ch
30
A
On-State Drain Currenta
ID(on)
VDS p -5 V, VGS = - 10 V
P-Ch
-30
A
VGS = 10 V, ID = 5.9 A
N-Ch
0.032
0.036
Drain Source On State Resistancea
rDS( )
VGS = - 10 V, ID = - 4.9 A
P-Ch
0.043
0.053
W
Drain-Source On-State Resistancea
rDS(on)
VGS = 4.5 V, ID = 4.9 A
N-Ch
0.042
0.053
W
VGS = - 4.5 V, ID = - 3.7 A
P-Ch
0.075
0.090
Forward Transconductancea
gf
VDS = 15 V, ID = 5.9 A
N-Ch
15
S
Forward Transconductancea
gfs
VDS = - 15 V, ID = - 4.9 A
P-Ch
9
S
Diode Forward Voltagea
VSD
IS = 1.7 A, VGS = 0 V
N-Ch
0.80
1.2
V
Diode Forward Voltagea
VSD
IS = - 1.7 A, VGS = 0 V
P-Ch
- 0.80
- 1.2
V
Dynamicb
Total Gate Charge
Qg
N-Ch
13
20
Total Gate Charge
Qg
N-Channel
VDS = 15 V VGS = 10 V ID = 5 9 A
P-Ch
15
25
Gate Source Charge
Q
VDS = 15 V, VGS = 10 V, ID = 5.9 A
P Channel
N-Ch
2.3
nC
Gate-Source Charge
Qgs
P-Channel
VDS = - 15 V, VGS = - 10 V, ID = - 4.9 A
P-Ch
4
nC
Gate Drain Charge
Q d
VDS = 15 V, VGS = 10 V, ID = 4.9 A
N-Ch
2
Gate-Drain Charge
Qgd
P-Ch
2.0
Gate Resistance
R
N-Ch
0.5
2.2
W
Gate Resistance
Rg
P-Ch
5
12.6
W
Turn On Delay Time
td( )
N-Ch
6
12
Turn-On Delay Time
td(on)
P-Ch
7
15
Rise Time
t
N-Channel
VDD = 15 V, RL = 15 W
N-Ch
14
25
Rise Time
tr
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
P-Ch
10
20
Turn Off Delay Time
td( ff)
P-Channel
V
1 V R
1
W
N-Ch
30
60
ns
Turn-Off Delay Time
td(off)
P Channel
VDD = - 15 V, RL = 15 W
ID ^ -1 A, VGEN = - 10 V, RG = 6 W
P-Ch
40
80
ns
Fall Time
tf
ID ^ - 1 A, VGEN = - 10 V, RG = 6 W
N-Ch
5
10
Fall Time
tf
P-Ch
20
40
Source-Drain
t
IF = 1.7 A, di/dt = 100 A/ms
N-Ch
30
60
Source-Drain
Reverse Recovery Time
trr
IF = - 1.7 A, di/dt = 100 A/ms
P-Ch
30
60
Notes
a.
Pulse test; pulse width
v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing.


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