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SI4539ADY Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. SI4539ADY
Description  N- and P-Channel 30-V (D-S) MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI4539ADY Datasheet(HTML) 1 Page - Vishay Siliconix

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Si4539ADY
Vishay Siliconix
Document Number: 71131
S-03951—Rev. B, 26-May-03
www.vishay.com
2-1
N- and P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
N-Channel
30
0.036 @ VGS = 10 V
5.9
N-Channel
30
0.053 @ VGS = 4.5 V
4.9
P Channel
30
0.053 @ VGS = - 10 V
- 4.9
P-Channel
-30
0.090 @ VGS = - 4.5 V
- 3.7
D1
G1
S1
N-Channel MOSFET
S2
G2
D2
P-Channel MOSFET
S1
D1
G1
D1
S2
D2
G2
D2
SO-8
5
6
7
8
Top View
2
3
4
1
Ordering Information: Si4539ADY
Si4539ADY-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Symbol
10 secs
Steady State
10 secs
Steady State
Unit
Drain-Source Voltage
VDS
30
-30
V
Gate-Source Voltage
VGS
"20
"20
V
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
ID
5.9
4.4
- 4.9
- 3.7
Continuous Drain Current (TJ = 150_C)a
TA = 70_C
ID
4.7
3.6
- 3.9
- 2.9
A
Pulsed Drain Current
IDM
30
A
Continuous Source Current (Diode Conduction)a
IS
1.7
0.9
- 1.7
- 0.9
Maximum Power Dissipationa
TA = 25_C
PD
2.0
1.1
2
1.1
W
Maximum Power Dissipationa
TA = 70_C
PD
1.3
0.7
1.3
0.7
W
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
_C
THERMAL RESISTANCE RATINGS
N-Channel
P-Channel
Parameter
Symbol
Typ
Max
Typ
Max
Unit
Mi
J
ti
t A bi
ta
t
v 10 sec
R
50
62.5
52
62.5
Maximum Junction-to-Ambienta
Steady State
RthJA
90
110
90
110
_C/W
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
32
40
32
40
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.


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