NTD4302G datasheet(3/7 Pages) ONSEMI

Part #	NTD4302G

Description	Power MOSFET

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Manufacturer	ONSEMI [ON Semiconductor]

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NTD4302

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TYPICAL CHARACTERISTICS

1.6

1.4

1

1.2

0.8

0.6

10

1

100

1000

10000

40

20

50

10

30

0

60

0.005

0

30

2

1.5

1

0

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

0

0.1

0.075

0.05

0.025

4

0

26

8

10

Figure 3. On−Resistance vs.

Gate−To−Source Voltage

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 4. On−Resistance vs. Drain Current

and Gate Voltage

ID, DRAIN CURRENT (AMPS)

Figure 5. On−Resistance Variation with

Temperature

TJ, JUNCTION TEMPERATURE (°C)

Figure 6. Drain−To−Source Leakage

Current vs. Voltage

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

50

−50

100

75

0

−25

125

150

23

6

0.00E+00

1.00E+01

0

0.01

0.015

525

20

15

10

30

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

10

20

40

2.5

3

VGS = 0 V

TJ = 150°C

TJ = 100°C

ID = 18.5 A

VGS = 10 V

VGS = 4.5 V

VGS = 10 V

TJ = 25°C

ID = 10 A

TJ = 25°C

VDS > = 10 V

TJ = 25°C

TJ = −55°C

TJ = 100°C

VGS = 10 V

VGS = 7 V

VGS = 5 V

VGS = 4.6 V

VGS = 4 V

VGS = 4.4 V

VGS = 3.8 V

VGS = 3.4 V

VGS = 3.2 V

VGS = 3.0 V

TJ = 25°C

50

25

45

VGS = 2.8 V

0.5

2.00E+01

3.00E+01

4.00E+01

5.00E+01

6.00E+01

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