STGIPS14K60T-H datasheet(10/19 Pages) STMICROELECTRONICS

Part #	STGIPS14K60T-H

Description	Undervoltage lockout

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Electrical characteristics

STGIPS14K60T-H

10/19

DocID024476 Rev 3

Note:

X: don’t care

Table 11. Shut down characteristics (VCC = 15 V unless otherwise specified)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

tsd

Shut down to high / low side

driver propagation delay

V

OUT = 0, Vboot = VCC,

V

IN = 0 to 3.3 V

50

125

200

ns

Table 12. Truth table

Condition

Logic input (VI)

Output

SD

LIN

HIN

LVG

HVG

Shutdown enable

half-bridge tri-state

LX

XL

L

Interlocking

half-bridge tri-state

HH

H

L

0 ‘’logic state”

half-bridge tri-state

HL

L

1 “logic state”

low side direct driving

HH

L

H

L

1 “logic state”

high side direct driving

HL

H

Figure 5. Maximum IC(RMS) current vs. switching

frequency (1)

Figure 6. Maximum IC(RMS) current vs. fSINE

(1)

1.

Simulated curves refer to typical IGBT parameters and maximum RthJC.

AM03801v2

8

10

12

14

16

18

4

6

8

1012141618

Ic(RMS) [A]

fsw [kHz]

TC = 100°C

TC = 80°C

VPN = 300 V, Modulation index = 0.8,

PF = 0.6, Tj = 150 °C, fSINE = 60 Hz

AM03802v2

6

7

8

9

10

11

110

Ic(RMS) [A]

fSINE [Hz]

fsw = 12 kHz

fsw = 20 kHz

fsw = 16 kHz

VPN = 300 V, Modulation index = 0.8,

PF = 0.6, Tj = 150°C, Tc = 100 °C

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