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S3PFB180G08B Datasheet(PDF) 1 Page - Sirectifier Semiconductors |
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S3PFB180G08B Datasheet(HTML) 1 Page - Sirectifier Semiconductors |
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1 / 3 page  S3PHB180, Three Phase Half Controlled Bridge Modules/Full Controlled Bridge Type VRRM VRSM Dimensions in mm (1mm=0.0394") S3PHBD180, S3PFB180 Symbol Test Conditions Maximum Ratings Unit Tc=85oC, module module per leg 110 110 58 A TVJ=45oC t=10ms (50Hz), sine VR=0 t=8.3ms (60Hz), sine TVJ=TVJM t=10ms(50Hz), sine VR=0 t=8.3ms(60Hz), sine 1150 1230 1000 1070 A IFSM,ITSM TVJ=45oC t=10ms (50Hz), sine VR=0 t=8.3ms (60Hz), sine TVJ=TVJM t=10ms(50Hz), sine VR=0 t=8.3ms(60Hz), sine 6600 6280 5000 4750 A2s I (di/dt) cr 150 500 A/us (dv/dt) cr T VJ =TVJM; VDR=2/3VDRM RGK= ; method 1 (linear voltage rise) 1000 V/us PGM TVJ=TVJM tp=30us IT=ITAVM tp=500us tp = 10ms 10 5 1 W Idav Idavm oC TVJ TVJM Tstg -40...+125 125 -40...+125 VISOL 50/60Hz, RMS t=1min IISOL<1mA t=1s 2500 3000 V~ Md Mounting torque (M6) (10-32 UNF) _ Nm/lb.in. Weight 305 g TVJ=125oC repetitive, IT=50A f=50Hz, tp=200us VD=2/3VDRM IG=0.3A non repetitive, IT=1/2 diG/dt=0.3A/us IFRMS,ITRMS 2t . Idav 5 ± 15 % 44 ± 15 % typical S3PHB180G08B S3PHB180G12B S3PHB180G16B S3PHB180G18B V 800 1200 1600 1800 V 900 1300 1700 1900 S3PHBD180G08B S3PHBD180G12B S3PHBD180G16B S3PHBD180G18B S3PFB180G08B S3PFB180G12B S3PFB180G16B S3PFB180G18B Symbol Test Conditions Maximum Ratings Unit Tc=85oC, module module per leg 180 180 89 A TVJ=45oC t=10ms (50Hz), sine VR=0 t=8.3ms (60Hz), sine TVJ=TVJM t=10ms(50Hz), sine VR=0 t=8.3ms(60Hz), sine 1500 1600 1350 1450 A IFSM,ITSM TVJ=45oC t=10ms (50Hz), sine VR=0 t=8.3ms (60Hz), sine TVJ=TVJM t=10ms(50Hz), sine VR=0 t=8.3ms(60Hz), sine 11200 10750 9100 8830 A2s I (di/dt) cr 150 500 A/us (dv/dt) cr T VJ =TVJM; VDR=2/3VDRM RGK= ; method 1 (linear voltage rise) 1000 V/us PGM TVJ=TVJM tp=30us IT=ITAVM tp=500us tp = 10ms 10 5 1 W Idav Idavm oC TVJ TVJM Tstg -40...+125 125 -40...+125 VISOL 50/60Hz, RMS t=1min IISOL<1mA t=1s 2500 3000 V~ Md Mounting torque (M6) (10-32 UNF) _ Nm/lb.in. Weight 305 g TVJ=125oC repetitive, IT=50A f=50Hz, tp=200us VD=2/3VDRM IG=0.3A non repetitive, IT=1/2 diG/dt=0.3A/us IFRMS,ITRMS 2t . Idav 5 ± 15 % 44 ± 15 % typical S3PHBD180 S3PFB180 S3PHB180 - + - + - + C D E ~ ~ ~ C D E ~ ~ ~ C D E ~ ~ ~ M6x10 C~ D~ E ~ A+ B- 12 25 66 26 26 72 80 94 4 5 6 3 1 2 7 2.8 x 0.8 M6 P1 ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com |
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