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STT60GKXX Datasheet(PDF) 4 Page - Sirectifier Semiconductors |
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STT60GKXX Datasheet(HTML) 4 Page - Sirectifier Semiconductors |
4 / 4 page STT60 . 3 STD60 . 0 0 Pvtot Pvtot IRMS 100 50 300 100 400 200 W 600 A Fig.4L Power dissipation of three modules vs. direct and rms current 200 500 ID 150 w3 B6 0 0 100 200 50 300 W 600 100 Fig.4R Power dissipation of three modules vs. case temp Ta Tc C O C O 150 K/W Rth(c-a) 400 500 125 114 104 93 82 72 61 1.5 1 0.8 0.6 0.5 0.4 0.3 0.25 0.2 0.15 0.12 0.1 0.08 0.06 0.04 3 STT60 . STD60 . 10 0 100 10 1000 A/us Fig.5 Recovered charge vs. current decrease 100 1/2 1/2 uC 5A 10A 20A 50A 100A Tvj=125 C o 0 0.001 0.01 K/W 100 Fig.6 Transient thermal impedance vs. time t Zth STT60 STD60 . 1/2 1/2 . Zth(j-s) Zth(j-c) 0.1 1 10 s 0.4 0.8 STT60 . STD60 . 0 0 100 200 Fig.7 On-state charactristics 1/2 1/2 250 A 150 50 IT Vt 0.5 1 1.5 2 V2.5 typ. max. Fig.8 Surge overload current vs. time ITM= 1 t 10 100 ms 1000 0.4 0.6 0.8 1 1.2 1.4 1.6 IT(OV) ITSM 2 STT60 STD60 . 1/2 1/2 . 1 VRRM . 0.5 VRRM . 0 VRRM . ITSM(25 C) =1500A O ITSM(125 C)=1250A O Thyristor-Thyristor Modules STT60GKxx Tvj=25 C O _ _ Tvj=125 C O - - |
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