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SI4486EY-T1 Datasheet(PDF) 3 Page - Vishay Siliconix

Part # SI4486EY-T1
Description  N-Channel 100-V (D-S) MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI4486EY-T1 Datasheet(HTML) 3 Page - Vishay Siliconix

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Si4486EY
Vishay Siliconix
Document Number: 71234
S-03951—Rev. B, 26-May-03
www.vishay.com
2-3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
500
1000
1500
2000
2500
3000
3500
0
102030
405060
0.5
0.8
1.1
1.4
1.7
2.0
2.3
2.6
- 50
- 25
0
25
50
75
100
125
150
175
0
2
4
6
8
10
0
6
12
18
24
30
36
0.00
0.01
0.02
0.03
0.04
0
8
16
24
32
40
VDS - Drain-to-Source Voltage (V)
Crss
Coss
Ciss
VDS = 50 V
ID = 7.9 A
ID - Drain Current (A)
VGS = 10 V
ID = 7.9 A
VGS = 10 V
VGS = 6.0 V
Gate Charge
On-Resistance vs. Drain Current
Qg - Total Gate Charge (nC)
Capacitance
On-Resistance vs. Junction Temperature
TJ - Junction Temperature (_C)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.00
0.02
0.04
0.06
0.08
0
2468
10
TJ = 175_C
TJ = 25_C
ID = 7.9 A
40
10
1
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)


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