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SI3552DV Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SI3552DV
Description  N- and P-Channel 30-V (D-S) MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI3552DV Datasheet(HTML) 2 Page - Vishay Siliconix

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Si3552DV
Vishay Siliconix
New Product
www.vishay.com
S FaxBack 408-970-5600
2-2
Document Number: 70971
S-61831—Rev. A, 23-Aug-99
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 mA
N-Ch
1.0
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = –250 mA
P-Ch
–1.0
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
N-Ch
"100
nA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
P-Ch
"100
nA
ZG
V l
D i C
I
VDS = 24 V, VGS = 0 V
N-Ch
1
A
Zero Gate Voltage Drain Current
IDSS
VDS = –24 V, VGS = 0 V
P-Ch
–1
mA
Zero Gate Voltage Drain Current
IDSS
VDS = 24 V, VGS = 0 V, TJ = 55_C
N-Ch
5
mA
VDS = –24 V, VGS = 0 V, TJ = 55_C
P-Ch
–5
On-State Drain Currenta
ID(on)
VDS = 5 V, VGS = 10 V
N-Ch
5
A
On-State Drain Currenta
ID(on)
VDS = –5 V, VGS = –10 V
P-Ch
–5
A
DiS
OS
R
i
a
VGS = 10 V, ID = 2.5 A
N-Ch
0.085
0.105
W
Drain-Source On-State Resistancea
rDS(on)
VGS = –10 V, ID = –1.8 A
P-Ch
0.165
0.200
W
Drain-Source On-State Resistancea
rDS(on)
VGS = 4.5 V, ID = 2.0 A
N-Ch
0.140
0.175
W
VGS = –4.5 V, ID = –1.2 A
P-Ch
0.298
0.360
Forward Transconductancea
gfs
VDS = 10 V, ID = 2.5 A
N-Ch
4.3
S
Forward Transconductancea
gfs
VDS = –15 V, ID = –1.8 A
P-Ch
2.4
S
Diode Forward Voltagea
VSD
IS = 1.05 A, VGS = 0 V
N-Ch
0.81
1.10
V
Diode Forward Voltagea
VSD
IS = –1.05 A, VGS = 0 V
P-Ch
–0.83
–1.10
V
Dynamicb
Total Gate Charge
Qg
NCh
l
N-Ch
2.1
3.2
C
Total Gate Charge
Qg
N-Channel
P-Ch
2.4
3.6
C
Gate-Source Charge
Qgs
N Channel
VDS = 15 V, VGS = 5 V, ID = 1.8 A
N-Ch
0.7
nC
Gate-Source Charge
Qgs
P-Channel
V15 V V
5 V I
1 8 A
P-Ch
0.9
nC
Gate-Drain Charge
Qgd
VDS = –15 V, VGS = –5 V, ID = –1.8 A
N-Ch
0.7
Gate-Drain Charge
Qgd
P-Ch
0.8
Turn-On Delay Time
td(on)
NCh
l
N-Ch
7
11
Turn-On Delay Time
td(on)
NCh
l
P-Ch
8
12
Rise Time
tr
N-Channel
VDD = 15 V, RL = 15 W
N-Ch
9
14
Rise Time
tr
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
P-Ch
12
18
Turn-Off Delay Time
td(off)
P-Channel
V15 V R
15
W
N-Ch
13
20
ns
Turn-Off Delay Time
td(off)
VDD = –15 V, RL = 15 W
ID ^ –1 A, VGEN = –10 V, RG = 6 W
P-Ch
12
18
ns
Fall Time
tf
ID
1 A, VGEN
10 V, RG
6
W
N-Ch
5
8
Fall Time
tf
P-Ch
7
11
Source-Drain
RR
Ti
trr
IF = 1.05 A, di/dt = 100 A/ms
N-Ch
35
60
Reverse Recovery Time
trr
IF = –1.05 A, di/dt = 100 A/ms
P-Ch
30
60
Notes
a.
Pulse test; pulse width
v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing.


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