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SI3552DV Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. SI3552DV
Description  N- and P-Channel 30-V (D-S) MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI3552DV Datasheet(HTML) 1 Page - Vishay Siliconix

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Si3552DV
Vishay Siliconix
New Product
Document Number: 70971
S-61831—Rev. A, 23-Aug-99
www.vishay.com
S FaxBack 408-970-5600
2-1
N- and P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
N-Channel
30
0.105 @ VGS = 10 V
"2.5
N-Channel
30
0.175 @ VGS = 4.5 V
"2.0
P-Channel
–30
0.200 @ VGS = –10 V
"1.8
P-Channel
–30
0.360 @ VGS = –4.5 V
"1.2
D1
G1
S1
N-Channel MOSFET
S2
G2
D2
P-Channel MOSFET
TSOP-6
Top View
6
4
1
2
3
5
2.85 mm
3 mm
D2
G2
S1
S2
D1
G1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
VDS
30
–30
V
Gate-Source Voltage
VGS
"20
"20
V
Continuous Drain Current (TJ = 150_C)a, b
TA = 25_C
ID
"2.5
"1.8
A
Continuous Drain Current (TJ = 150_C)a, b
TA = 70_C
ID
"2.0
"1.2
A
Pulsed Drain Current
IDM
"8
"7
A
Continuous Source Current (Diode Conduction)a, b
IS
1.05
–1.05
Maximum Power Dissipationa, b
TA = 25_C
PD
1.15
W
Maximum Power Dissipationa, b
TA = 70_C
PD
0.73
W
Operating Junction and Storage Temperature Range
TJ, Tstg
–55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
t
v 5 sec
RthJA
93
110
_C/W
Maximum Junction-to-Ambienta
Steady State
RthJA
130
150
_C/W
Maximum Junction-to-Lead
Steady State
RthJL
75
90
Notes
a.
Surface Mounted on FR4 Board.
b.
t
v 5 sec


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