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SI3552DV Datasheet(PDF) 6 Page - Vishay Siliconix

Part No. SI3552DV
Description  N- and P-Channel 30-V (D-S) MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI3552DV Datasheet(HTML) 6 Page - Vishay Siliconix

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Si3552DV
Vishay Siliconix
New Product
www.vishay.com
S FaxBack 408-970-5600
2-6
Document Number: 70971
S-61831—Rev. A, 23-Aug-99
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
P-CHANNEL
1.2
1.5
0.1
1
10
0.00
0.3
0.6
0.9
TJ = 25_C
TJ = 150_C
Source-Drain Diode Forward Voltage
VSD – Source-to-Drain Voltage (V)
–0.4
–0.2
0.0
0.2
0.4
0.6
–50
–25
0
25
50
75
100
125
150
0
0.1
0.2
0.3
0.4
0.5
0.6
024
68
10
VGS – Gate-to-Source Voltage (V)
0
2
4
6
8
10
012345
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
–50
–25
0
25
50
75
100
125
150
Gate Charge
Qg – Total Gate Charge (nC)
On-Resistance vs. Junction Temperature
VGS = 10 V
ID = 1.8 A
TJ – Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
TJ – Temperature (_C)
ID = 250 mA
VDS = 15 V
ID = 1.8 A
ID = 1.8 A
ID = 1 A
0.01
0
1
6
8
2
4
10
30
0.1
Single Pulse Power (Junction-to-Ambient)
Time (sec)


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