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SI3552DV Datasheet(PDF) 6 Page - Vishay Siliconix |
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SI3552DV Datasheet(HTML) 6 Page - Vishay Siliconix |
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6 / 7 page  Si3552DV Vishay Siliconix New Product www.vishay.com S FaxBack 408-970-5600 2-6 Document Number: 70971 S-61831—Rev. A, 23-Aug-99 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P-CHANNEL 1.2 1.5 0.1 1 10 0.00 0.3 0.6 0.9 TJ = 25_C TJ = 150_C Source-Drain Diode Forward Voltage VSD – Source-to-Drain Voltage (V) –0.4 –0.2 0.0 0.2 0.4 0.6 –50 –25 0 25 50 75 100 125 150 0 0.1 0.2 0.3 0.4 0.5 0.6 024 68 10 VGS – Gate-to-Source Voltage (V) 0 2 4 6 8 10 012345 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 –50 –25 0 25 50 75 100 125 150 Gate Charge Qg – Total Gate Charge (nC) On-Resistance vs. Junction Temperature VGS = 10 V ID = 1.8 A TJ – Junction Temperature (_C) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage TJ – Temperature (_C) ID = 250 mA VDS = 15 V ID = 1.8 A ID = 1.8 A ID = 1 A 0.01 0 1 6 8 2 4 10 30 0.1 Single Pulse Power (Junction-to-Ambient) Time (sec) |
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