SI3435DV datasheet(1/5 Pages) VISHAY

Part #	SI3435DV

Description	P-Channel 12-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Si3435DV

Vishay Siliconix

New Product

Document Number: 71318

S-03371—Rev. B, 03-Mar-03

www.vishay.com

1

P-Channel 12-V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V)

rDS(on) (W)

ID (A)

0.036 @ VGS = - 4.5 V

- 6.3

-12

0.050 @ VGS = - 2.5 V

- 5.3

0.073 @ VGS = - 1.8 V

- 4.4

(4) S

(3) G

(1, 2, 5, 6) D

P-Channel MOSFET

TSOP-6

Top View

6

4

1

2

3

5

2.85 mm

3 mm

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

5 secs

Steady State

Unit

Drain-Source Voltage

VDS

-12

V

Gate-Source Voltage

VGS

"8

V

Continuous Drain Current (TJ = 150_C)a

TA = 25_C

ID

- 6.3

- 4.8

Continuous Drain Current (TJ = 150_C)a

TA = 85_C

ID

- 4.6

- 3.4

A

Pulsed Drain Current

IDM

-20

A

Continuous Diode Current (Diode Conduction)a

IS

- 1.7

- 0.9

Maximum Power Dissipationa

TA = 25_C

PD

2.0

1.1

W

Maximum Power Dissipationa

TA = 85_C

PD

1.0

0.6

W

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Mi

J

ti

t A bi

ta

t

v 5 sec

R

45

62.5

Maximum Junction-to-Ambienta

Steady State

RthJA

90

110

_C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

25

30

C/W

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

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