STFU15NM65N datasheet(3/12 Pages) STMICROELECTRONICS

Part #	STFU15NM65N

Description	N-channel 650 V, 0.35 廓 typ., 12 A MDmesh??II Power MOSFET in a TO-220FP ultra narrow leads package

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STFU15NM65N

Electrical ratings

DocID027631 Rev 2

3/12

1

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain source voltage

650

V

VGS

Gate source voltage

± 25

V

ID

Drain current (continuous) at TC = 25 °C

12(1)

A

Drain current (continuous) at TC = 100 °C

7.56

IDM(2)

Drain current (pulsed)

48

A

PTOT

Total dissipation at TC = 25 °C

30

W

VISO

Insulation withstand voltage (RMS) from all three leads to

external heat sink (t = 1 s; TC = 25 °C)

2500

V

dv/dt (3)

Peak diode recovery voltage slope

15

V/ns

Tstg

Storage temperature

- 55 to 150

°C

Tj

Operating junction temperature

Notes:

(1)Limited by maximum junction temperature.

(2)Pulse width limited by safe operating area.

(3)ISD ≤ 12 A, di/dt ≤ 400 A/µs; VDSpeak ≤ V(BR)DSS, VDD = 80% V(BR)DSS.

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case max

4.17

°C/W

Rthj-amb

Thermal resistance junction-ambient max

62.5

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive

(pulse width limited by Tjmax)

3

A

EAS

Single pulse avalanche energy

(starting Tj = 25°C, ID = IAR; VDD = 50 V)

187

mJ

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