SI1413EDH datasheet(3/5 Pages) VISHAY

Part #	SI1413EDH

Description	P-Channel 20-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Si1413EDH

Vishay Siliconix

New Product

Document Number: 71396

S-03186—Rev. A, 05-Mar-01

www.vishay.com

3

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

2

4

6

8

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0.0

0.1

0.2

0.3

0.4

0.5

0.0

1.5

3.0

4.5

6.0

7.5

0

2

4

6

8

0

1234

5

0

1

2

3

4

5

0.0

1.5

3.0

4.5

6.0

7.5

0.6

0.8

1.0

1.2

1.4

1.6

–50

–25

0

25

50

75

100

125

150

0

200

400

600

800

1000

04

8

12

16

20

VGS = 5 thru 2.5 V

25

_C

TC = –55_C

Crss

Coss

Ciss

VDS = 10 V

ID = –2.9 A

VGS = 4.5 V

ID = –2.9 A

VGS = 4.5 V

VGS = 2.5 V

125

_C

1.5 V

Output Characteristics

Transfer Characteristics

Gate Charge

On-Resistance vs. Drain Current

VDS – Drain-to-Source Voltage (V)

VGS – Gate-to-Source Voltage (V)

Qg – Total Gate Charge (nC)

VDS – Drain-to-Source Voltage (V)

ID – Drain Current (A)

Capacitance

On-Resistance vs. Junction Temperature

TJ – Junction Temperature (_C)

VGS = 1.8 V

2 V

1 V

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