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LET9060S Datasheet(PDF) 1 Page - STMicroelectronics |
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LET9060S Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 11 page Preliminary data This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. February 2011 Doc ID 010019 Rev 1 1/11 11 LET9060 RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features ■ Excellent thermal stability ■ Common source configuration ■ POUT = 60 W with 17.2 dB gain @ 960 MHz / 28 V ■ New RF plastic package Description The LET9060 is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broadband, commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. LET9060 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. LET9060’s superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Figure 1. Pin connection PowerSO-10RF (formed lead) PowerSO-10RF (straight lead) Gate Source Drain Table 1. Device summary Order codes Packages Marking Packaging LET9060 PowerSO-10RF (formed lead) LET9060 Tube LET9060S PowerSO-10RF (straight lead) LET9060S Tube LET9060TR PowerSO-10RF (formed lead) LET9060 Tape and reel LET9060STR PowerSO-10RF (straight lead) LET9060S Tape and reel www.st.com |
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